Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

230W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 150μA

Turn Off Delay Time  

43 ns

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

97A Tc

Series  

HEXFET®

Published  

2011

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Additional Feature  

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

IRFS4410

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

9m Ω @ 58A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4820pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

120nC @ 10V

Rise Time  

52ns

Vgs (Max)  

±20V

Fall Time (Typ)  

57 ns

Continuous Drain Current (ID)  

97A

Threshold Voltage  

2V

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.009Ohm

Drain to Source Breakdown Voltage  

100V

Avalanche Energy Rating (Eas)  

242 mJ

Nominal Vgs  

2 V

Width  

9.65mm

Length  

10.67mm

Height  

4.83mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant